IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Xian and Mingxin actually photo. Lead finish uncontrolled in L1.
IRFP440 Datasheet Download
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Mold flash shall not exceed 0. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
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Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Drain Current Current regulator Same type as D. B, Mar This datasheet is subject to change without notice.
Product names and markings noted herein may be trademarks of their respective owners. Thermal pad contour optional with dimensions D1 and E1.
IRFP 데이터시트(PDF) – Intersil Corporation
Contour of slot optional. Dimension D and E do not include mold flash. Case Temperature tr td off tf Fig.
Repetitive rating; pulse width limited by maximum junction temperature see fig.